silicon Epitaxial wafers
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Contact info
E-mail waferhome@hotmail.comSpecification for silicon Epitaxial wafers Wafer
Epitaxial layer | subustrate layer | ||||||||
---|---|---|---|---|---|---|---|---|---|
Diameter | Substrate Layer Material | Epi Layer Material | Type/dopant |
Orientaion |
thickness | Resistivity | Flat |
Type/dopant |
Resistivity |
300mm | Silicon | Silicon | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation |
2 - 100um +/-6% | 0.1- 200 Ohm-cm /Customization |
N/A 16mm 22.5mm | P(Boron) N(Phos/As/Sb) | 0.0001 - 200 Ohm-cm /Customization |
200mm | Silicon | Silicon | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 2 - 100um +/-6% | 0.1- 200 Ohm-cm /Customization | 32.5mm 42.5mm 57.5mm | P(Boron) N(Phos/As/Sb) | 0.0001 - 200 Ohm-cm /Customization |
150mm | Silicon | Silicon | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 2 - 100um +/-6% | 0.1- 200 Ohm-cm /Customization |
nothch/flat | P(Boron) N(Phos/As/Sb) | 0.0001 - 200 Ohm-cm /Customization |
100mm | Silicon | Silicon | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 2 - 100um +/-6% | 0.1- 200 Ohm-cm /Customization | notch/flat | P(Boron) N(Phos/As/Sb) | 0.0001 - 200 Ohm-cm /Customization |
300mm | Silicon | GaN | N or P or Intrinsic | N/A 16mm 22.5mm | P(Boron) N(Phos/As/Sb) | 0.0001 - 200 Ohm-cm /Customization | |||
200mm | Silicon | GaN | N or P or Intrinsic | 32.5mm 42.5mm 57.5mm | P(Boron) N(Phos/As/Sb) | 0.0001 - 200 Ohm-cm /Customization | |||
150mm | Silicon | Gan | N or P or Intrinsic | nothch/flat | P(Boron) N(Phos/As/Sb) | 0.0001 - 200 Ohm-cm /Customization | |||
100mm | Silicon | GaN | N or P or Intrinsic | notch/flat | P(Boron) N(Phos/As/Sb) | 0.0001 - 200 Ohm-cm /Customization | |||
300mm | Sappire | GaN | N or P or Intrinsic | ||||||
200mm | Sappire | GaN | N or P or Intrinsic | ||||||
150mm | Sappire | Gan | N or P or Intrinsic | ||||||
100mm | Sappire | GaN | N or P or Intrinsic |